The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2025

Filed:

Oct. 28, 2022
Applicant:

Asahi Kasei Microdevices Corporation, Tokyo, JP;

Inventors:

Hiromi Fujita, Tokyo, JP;

Osamu Morohara, Tokyo, JP;

Daiki Yasuda, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/46 (2009.12); H10F 30/22 (2024.12); H10F 77/124 (2024.12); H10F 77/30 (2024.12); H10H 20/825 (2024.12); H10H 20/841 (2024.12);
U.S. Cl.
CPC ...
H10H 20/841 (2024.12); H10F 30/22 (2024.12); H10F 77/12485 (2024.12); H10F 77/306 (2024.12); H10H 20/825 (2024.12);
Abstract

Provided is a high-performance infrared optical device including a reflecting layer structure that can be widely used in the mid-infrared region. An infrared optical device that has a light emission/reception property of having a peak at a center wavelength λ comprises: a semiconductor substrate; and a thin film laminate portion including a first reflecting layer formed on the semiconductor substrate, a lower semiconductor layer of a first conductivity type, a light emitting/receiving layer, an upper semiconductor layer of a second conductivity type, and a second reflecting layer in the stated order, wherein the first reflecting layer has a constituent material made of AlGaInAsSb where 0≤Al+Ga≤0.5 and 0≤As≤1.0, and includes a plurality of layers that differ in impurity concentration, and the center wavelength λ is 2.5 μm or more at room temperature.


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