The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2025
Filed:
Jan. 21, 2022
Applicant:
Alpha and Omega Semiconductor International Lp, Toronto, CA;
Inventors:
Madhur Bobde, Sunnyvale, CA (US);
Sik Lui, Sunnyvale, CA (US);
Lei Zhang, Portland, OR (US);
Xiaobin Wang, San Jose, CA (US);
Assignee:
ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP, Toronto, CA;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2005.12); H10D 62/17 (2024.12); H10D 64/27 (2024.12); H10D 84/01 (2024.12); H10D 84/03 (2024.12);
U.S. Cl.
CPC ...
H10D 64/513 (2024.12); H10D 62/393 (2024.12); H10D 84/0144 (2024.12); H10D 84/038 (2024.12);
Abstract
A device and a method of making the device comprising, a semiconductor substrate layer and an epitaxial layer formed on the semiconductor substrate. One or more trenches are formed in the epitaxial layer, each trench having a pair of opposing sidewalls, wherein a distance between the opposing sidewalls is greater near a bottom of the trench than near a top of the trench, wherein the bottom of the trench is closer to the semiconductor substrate layer than the top.