The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2025
Filed:
Jan. 26, 2022
Applicant:
Db Hitek Co., Ltd., Bucheon-si, KR;
Inventors:
Won Kook Cho, Bucheon-si, KR;
Myeong Bum Pyun, Incheon, KR;
Assignee:
DB HiTek Co., Ltd., Bucheon-si, KR;
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2024.12); H10D 30/01 (2024.12); H10D 30/66 (2024.12); H10D 62/17 (2024.12);
U.S. Cl.
CPC ...
H10D 62/111 (2024.12); H10D 30/0291 (2024.12); H10D 30/665 (2024.12); H10D 62/104 (2024.12); H10D 62/105 (2024.12); H10D 62/393 (2024.12);
Abstract
A superjunction semiconductor device with an epitaxial layer having different effective thicknesses and a method of manufacturing the same are disclosed. The superjunction semiconductor device includes an epitaxial layer having different thicknesses in a cell region and a ring region to decrease a breakdown voltage of the cell region relative to a breakdown voltage of the ring region so as to reveal a characteristic of the breakdown voltage of the cell region.
Quick Actions:
Cho, Won. (2025). Superjunction semiconductor device with different effective epitaxial layer thicknesses (U.S. Patent No. 12295159). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12295159
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