The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2025

Filed:

Mar. 14, 2024
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Ralf Siemieniec, Villach, AT;

Wolfgang Jantscher, Villach, AT;

David Kammerlander, Villach, AT;

Assignee:

INFINEON TECHNOLOGIES AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2005.12); H01L 29/16 (2005.12); H01L 29/66 (2005.12); H10D 30/01 (2024.12); H10D 30/66 (2024.12); H10D 62/832 (2024.12);
U.S. Cl.
CPC ...
H10D 30/668 (2024.12); H10D 30/0297 (2024.12); H10D 62/8325 (2024.12);
Abstract

In an example, for manufacturing a semiconductor device, first dopants are implanted through a first surface section of a first surface of a silicon carbide body. A trench is formed that extends from the first surface into the silicon carbide body. The trench includes a first sidewall surface and an opposite second sidewall surface. A spacer mask is formed. The spacer mask covers at least the first sidewall surface. Second dopants are implanted through a portion of a bottom surface of the trench exposed by the spacer mask. The first dopants and the second dopants have a same conductivity type. The first dopants and the second dopants are activated. The first dopants form a doped top shielding region adjoining the second sidewall surface. The second dopants form a doped buried shielding region adjoining the bottom surface.


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