The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2025
Filed:
May. 19, 2022
Newport Fab, Llc, Newport Beach, CA (US);
Allan K. Calvo, Tustin, CA (US);
Kamei Masayuki, Toyama, JP;
Newport Fab, LLC, Newport Beach, CA (US);
Abstract
A semiconductor-on-insulator (SOI) device includes a semiconductor layer situated over a buried oxide layer, the buried oxide layer being situated over a substrate. An SOI transistor is situated in the semiconductor layer and includes a transistor body, gate fingers, source regions, and drain regions. The transistor body has a first conductivity type. The source regions and the drain regions have a second conductivity type opposite to the first conductivity type. The transistor body is electrically tied to at least one source region. An asymmetric halo-implant region having the first conductivity type adjoins the at least one source region. No halo-implant region adjoins the drain regions.