The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2025
Filed:
Dec. 30, 2024
Nanjing University, Jiangsu, CN;
Feng Zhou, Jiangsu, CN;
Yu Rong, Jiangsu, CN;
Hai Lu, Jiangsu, CN;
Weizong Xu, Jiangsu, CN;
Dong Zhou, Jiangsu, CN;
Fangfang Ren, Jiangsu, CN;
NANJING UNIVERSITY, Nanjing, CN;
Abstract
A wide bandgap semiconductor structure for an irradiation characteristic test includes a substrate with metal plates and a wide bandgap semiconductor part. The wide bandgap semiconductor part includes a gallium nitride layer, a barrier layer, P-type gallium nitride layers, source ohmic metal layers, and drain ohmic metal layers. The P-type gallium nitride layers are connected to a gate interconnection metal layer via gate metal layers and metal lead wires. A gate top metal layer is provided on the gate interconnection metal layer. Each source ohmic metal layer is provided with a source interconnection metal layer and source top metal layers. Each drain ohmic metal layer is provided with a drain interconnection metal layer and drain top metal layers. The wide bandgap semiconductor part is connected to the metal plates through the source top metal layers, the drain top metal layers, and the gate top metal layer.