The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2025

Filed:

Mar. 17, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Junhyoung Kim, Seoul, KR;

Youngjin Kwon, Suwon-si, KR;

Jeongeun Kim, Hwaseong-si, KR;

Byunggon Park, Seoul, KR;

Sungwon Cho, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2022.12); H01L 23/528 (2005.12); H10B 41/10 (2022.12); H10B 41/27 (2022.12); H10B 41/40 (2022.12); H10B 41/50 (2022.12); H10B 43/10 (2022.12); H10B 43/40 (2022.12); H10B 51/50 (2022.12);
U.S. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 23/5283 (2012.12); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/40 (2023.01); H10B 41/50 (2023.01); H10B 43/10 (2023.01); H10B 43/40 (2023.01); H10B 51/50 (2023.01);
Abstract

A memory device includes a lower structure, a stacked structure on the lower structure, the stacked structure including horizontal layers and interlayer insulating layers alternately stacked in a vertical direction, and each of the horizontal layers including a gate electrode, a vertical structure penetrating through the stacked structure in the vertical direction, the vertical structure having a core region, a pad pattern with a pad metal pattern on the core region, a dielectric structure including a first portion facing a side surface of the core region, a second portion facing at least a portion of a side surface of the pad metal pattern, and a data storage layer, and a channel layer between the dielectric structure and the core region, a contact structure on the vertical structure, and a conductive line on the contact structure.


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