The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2025

Filed:

Jun. 24, 2021
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Massimo Cataldo Mazzillo, Corato, IT;

Valeria Cinnera Martino, Valverde, IT;

Antonella Sciuto, S. Giovanni la Punta, IT;

Assignee:

STMicroelectronics S.r.l., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/12 (2005.12); H01L 31/0376 (2005.12); H01L 31/107 (2005.12); H01L 31/18 (2005.12); H01L 33/00 (2009.12); H01L 33/06 (2009.12); H01L 33/12 (2009.12); H01L 33/32 (2009.12); H01L 33/34 (2009.12);
U.S. Cl.
CPC ...
H01L 31/12 (2012.12); H01L 31/03762 (2012.12); H01L 31/107 (2012.12); H01L 31/1848 (2012.12); H01L 33/007 (2012.12); H01L 33/06 (2012.12); H01L 33/12 (2012.12); H01L 33/325 (2012.12); H01L 33/34 (2012.12);
Abstract

An optoelectronic device with a semiconductor body that includes: a bottom cathode structure, formed by a bottom semiconductor material, and having a first type of conductivity; and a buffer region, arranged on the bottom cathode structure and formed by a buffer semiconductor material different from the bottom semiconductor material. The optoelectronic device further includes: a receiver comprising a receiver anode region, which is formed by the bottom semiconductor material, has a second type of conductivity, and extends in the bottom cathode structure; and an emitter, which is arranged on the buffer region and includes a semiconductor junction formed at least in part by a top semiconductor material, different from the bottom semiconductor material.


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