The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2025
Filed:
Dec. 26, 2021
Fuji Electric Co., Ltd., Kawasaki, JP;
Motoyoshi Kubouchi, Matsumoto, JP;
Takashi Yoshimura, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
A region for adjusting a carrier lifetime is easily formed by a method in which damage to a predetermined surface of a semiconductor substrate is small. Provided is a semiconductor apparatus including: a semiconductor substrate having an upper surface and a lower surface; a first region provided in a region on an upper surface side of the semiconductor substrate and having a first chemical concentration peak of a first impurity at a first depth position; and a second region provided in a region different from the first region in the semiconductor substrate and having a second chemical concentration peak of the first impurity at the first depth position. At the first depth position, a concentration of a recombination center of the second region is lower than a concentration of the recombination centers of the first region.