The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2025

Filed:

Apr. 03, 2023
Applicant:

Sony Group Corporation, Tokyo, JP;

Inventors:

Hiroshi Tayanaka, Kanagawa, JP;

Kentaro Akiyama, Kanagawa, JP;

Yorito Sakano, Kanagawa, JP;

Takashi Oinoue, Tokyo, JP;

Yoshiya Hagimoto, Kanagawa, JP;

Yusuke Matsumura, Kanagawa, JP;

Naoyuki Sato, Kanagawa, JP;

Yuki Miyanami, Kanagawa, JP;

Yoichi Ueda, Kanagawa, JP;

Ryosuke Matsumoto, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2005.12); H01L 27/02 (2005.12); H01L 27/14 (2005.12); H04N 23/741 (2022.12); H04N 25/583 (2022.12); H04N 25/589 (2022.12); H04N 25/59 (2022.12); H04N 25/60 (2022.12); H04N 25/68 (2022.12); H04N 25/75 (2022.12); H04N 25/76 (2022.12); H04N 25/77 (2022.12);
U.S. Cl.
CPC ...
H01L 27/146 (2012.12); H01L 27/0248 (2012.12); H01L 27/14 (2012.12); H01L 27/14614 (2012.12); H01L 27/14621 (2012.12); H01L 27/14623 (2012.12); H01L 27/1464 (2012.12); H01L 27/14647 (2012.12); H04N 23/741 (2022.12); H04N 25/583 (2022.12); H04N 25/589 (2022.12); H04N 25/59 (2022.12); H04N 25/60 (2022.12); H04N 25/68 (2022.12); H04N 25/75 (2022.12); H04N 25/76 (2022.12); H04N 25/77 (2022.12);
Abstract

The present technology relates to a solid-state image sensing device and an electronic device for reducing noises. The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit.


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