The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2025

Filed:

Mar. 11, 2022
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Megumi Ishiduki, Yokkaichi, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2005.12); H01L 23/528 (2005.12); H01L 23/535 (2005.12); H10B 41/27 (2022.12); H10B 43/27 (2022.12);
U.S. Cl.
CPC ...
H01L 23/5283 (2012.12); H01L 23/535 (2012.12); H10B 41/27 (2023.01); H10B 43/27 (2023.01);
Abstract

According to one embodiment, a semiconductor device includes a stacked body in which a plurality of conductive layers including upper conductive layers and lower conductive layers are stacked to be apart from each other in a first direction, and which includes a stairs-shaped end portion, the upper conductive layers functioning as select gate lines for a NAND string, and the lower conductive layers functioning as word lines for the NAND string, a plurality of pillar structures each including a semiconductor layer extending in the first direction through the stacked body, and a first contact connected to two or more first upper conductive layers stacked successively, and provided to extend over upper surfaces of the two or more first upper conductive layers.


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