The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2025
Filed:
Mar. 31, 2022
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Wei-Chen Pan, New Taipei, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2005.12); H01L 21/768 (2005.12); H01L 23/522 (2005.12);
U.S. Cl.
CPC ...
H01L 21/31144 (2012.12); H01L 21/76816 (2012.12); H01L 21/76829 (2012.12); H01L 21/76877 (2012.12); H01L 23/5226 (2012.12);
Abstract
The present application provides a reworking method of a failed hard mask layer on a via opening in a dielectric layer, including removing the failed hard mask layer; forming an underfill layer to fill the via opening; forming a top hard mask layer on the underfill layer; and forming a mask layer on the top hard mask layer.
Pan, Wei-Chen. (2025). Reworking process of a failed hard mask for fabricating a semiconductor device (U.S. Patent No. 12293922). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12293922
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile