The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2025

Filed:

Jul. 01, 2022
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventor:

Nam Jae Lee, Cheongju-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 5/02 (2005.12); G11C 5/06 (2005.12); H01L 23/522 (2005.12); H10B 41/27 (2022.12); H10B 43/27 (2022.12);
U.S. Cl.
CPC ...
G11C 5/025 (2012.12); G11C 5/06 (2012.12); H01L 23/5226 (2012.12); H10B 41/27 (2023.01); H10B 43/27 (2023.01);
Abstract

Provided herein is a semiconductor memory device and a manufacturing method of the semiconductor memory device. The semiconductor memory device includes a contact pattern including a vertical contact part, and a sidewall contact part extending from the vertical contact part in a direction crossing the vertical contact part, a lower conductive pattern having a hole into which the vertical contact part is inserted, and an upper conductive pattern overlapping a portion of the lower conductive pattern. The upper conductive pattern includes a first side portion in contact with the sidewall contact part, and a second side portion facing the vertical contact part and spaced apart from the vertical contact part.


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