The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2025
Filed:
May. 17, 2024
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Sung Hun Kim, Gyeonggi-do, KR;
Hyo Jae Lee, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2005.12); G11C 5/14 (2005.12); G11C 16/08 (2005.12); G11C 16/34 (2005.12);
U.S. Cl.
CPC ...
G11C 16/26 (2012.12); G11C 5/147 (2012.12); G11C 16/08 (2012.12); G11C 16/3431 (2012.12);
Abstract
Disclosed are a non-volatile memory device, a memory system including the same and a read method of the memory system, in which the non-volatile memory device includes a first storage in which a basic offset level for a read retry operation is stored, a second storage in which an additional offset level for the read retry operation is stored, and a voltage generator suitable for adjusting, when the read retry operation is performed, a read voltage by using the basic offset level and further by selectively using the additional offset level depending on a read operation.