The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2025

Filed:

Mar. 21, 2023
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Gyeong Cheol Park, Gyeonggi-do, KR;

Min Chul Sung, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/02 (2005.12); G11C 11/22 (2005.12); G11C 11/4076 (2005.12); G11C 11/4078 (2005.12); G11C 11/4091 (2005.12);
U.S. Cl.
CPC ...
G11C 11/2273 (2012.12); G11C 11/2255 (2012.12); G11C 11/2259 (2012.12); G11C 11/2295 (2012.12); G11C 11/2297 (2012.12); G11C 11/4076 (2012.12); G11C 11/4078 (2012.12); G11C 11/4091 (2012.12);
Abstract

A memory device includes a memory cell array including a plurality of memory cells; a sense amplifying circuit configured to sense data of the memory cells through bit lines, the sense amplifying circuit including: a first operational circuit configured to perform a first operation according to a first sensing control signal; and a second operational circuit configured to perform a second operation according to a second sensing control signal; and an operational monitoring circuit configured to provide the first sensing control signal or the second sensing control signal by monitoring whether at least some of the memory cells have a ferroelectric property.


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