The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2025
Filed:
May. 21, 2020
Nec Corporation, Tokyo, JP;
Ryota Yuge, Tokyo, JP;
Noriyuki Tonouchi, Tokyo, JP;
NEC CORPORATION, Tokyo, JP;
Abstract
An object of the present invention is to provide a bolometer having a high TCR value and a low resistance, and a method for manufacturing the infrared sensor. One aspect of the present embodiment relates to a bolometer comprising: a substrate; a first electrode on the substrate; a second electrode spaced from the first electrode on the substrate; and a carbon nanotube layer electrically connected to the first electrode and the second electrode, wherein the carbon nanotube layer comprises 90% by mass or more of semiconducting carbon nanotubes based on the total amount of carbon nanotubes, and the carbon nanotube layer has an alignment satisfying: fx/fy≥2 where an integrated value f of amplitudes of frequencies from −1 μmto +1 μmin one direction from the center is calculated in an image obtained by performing two-dimensional fast Fourier transform processing on an SEM image of the carbon nanotube layer, and an integrated value for a direction x in which the integrated value f becomes maximum is defined as fx and an integrated value for a direction y perpendicular to the direction x is defined as fy.