The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2025

Filed:

Oct. 28, 2022
Applicant:

Xi'an Eswin Material Technology Co., Ltd., Xi'an, CN;

Inventors:

Zhenliang Song, Xi'an, CN;

Shaojie Song, Xi'an, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/20 (2005.12); C30B 29/06 (2005.12); C30B 30/04 (2005.12);
U.S. Cl.
CPC ...
C30B 30/04 (2012.12); C30B 15/20 (2012.12); C30B 29/06 (2012.12);
Abstract

A method for growing a single-crystal silicon ingot and a single-crystal silicon ingot includes, during an initial stage of body growing process of the single-crystal silicon ingot, controlling an initial height of a horizontal magnetic field to be higher than a free surface of silicon melt. The method further includes, during the body growing process of the single-crystal silicon ingot, adjusting the horizontal magnetic field on convection intensity of the silicon melt to make oxygen concentration of the single-crystal silicon ingot to be decreased in an axial direction from a head portion to a tail portion.


Find Patent Forward Citations

Song, Zhenliang. (2025). Method for growing single-crystal silicon ingots and single-crystal silicon ingots (U.S. Patent No. 12291796). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12291796

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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