The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2025

Filed:

Apr. 18, 2023
Applicant:

Kennametal Inc., Latrobe, PA (US);

Inventor:

Joern Kohlscheen, Ebermannstadt, DE;

Assignee:

KENNAMETAL INC., Latrobe, PA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 14/06 (2005.12); B23B 27/14 (2005.12); B23C 5/16 (2005.12); C23C 28/00 (2005.12); C23C 30/00 (2005.12);
U.S. Cl.
CPC ...
B23B 27/148 (2012.12); B23B 27/14 (2012.12); B23C 5/16 (2012.12); C23C 14/0641 (2012.12); C23C 28/42 (2012.12); C23C 30/005 (2012.12); B23B 2224/08 (2012.12); B23B 2224/36 (2012.12);
Abstract

A method for coating a substrateis disclosed. The method includes at least the following steps: depositing a first base layercomprising a nitride of at least Al and Cr on the substrateby physical vapor deposition at a gradually increasing substrate bias voltage from a first substrate bias voltage to a second substrate bias voltage; depositing a second base layercomprising a nitride of at least Al and Cr on the first base layerby physical vapor deposition at a constant substrate bias voltage that is greater or equal to the second substrate bias voltage; and depositing an outermost indicator layeron the second base layer, wherein the outermost indicator layercomprises a nitride of Si and Me, wherein Me is at least one of Ti, Zr, Hf, and Cr, wherein the outermost indicator layeris deposited by physical vapor deposition at a substrate bias voltage that is less than the constant substrate bias voltage applied during deposition of the second base layer


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