The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2025

Filed:

May. 02, 2024
Applicant:

Toshiba Global Commerce Solutions, Inc., Durham, NC (US);

Inventors:

Timothy Crockett, Raleigh, NC (US);

Lester Bartus, Jr., Wake Forest, NC (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2022.12); G11C 13/00 (2005.12); H10B 63/00 (2022.12); H10N 70/20 (2022.12);
U.S. Cl.
CPC ...
H10N 70/826 (2023.01); G11C 13/0004 (2012.12); G11C 13/0038 (2012.12); H10B 63/20 (2023.01); H10N 70/231 (2023.01); H10N 70/8413 (2023.01); H10N 70/8828 (2023.01); G11C 2013/009 (2012.12);
Abstract

A non-volatile multi-bit storage device that includes a phase change material doped with n-type or p-type semiconductor impurities, a first set of electrodes ohmically coupled to the phase change material, a second set of electrodes configured to apply an electric field across the phase change material. To program the non-volatile multi-bit storage device, an electrical field is applied to the phase change material as crystal annealing cool down is performed. Application of the electric field during the crystal annealing cool down forms a rectified current path through the phase change material.


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