The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Dec. 16, 2021
International Business Machines Corporation, Armonk, NY (US);
Gerald W. Gibson, Danbury, CT (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
Techniques for forming respective groups of quantum circuit elements (QCEs) on respective crystalline surfaces of a crystalline dielectric (CD) layer are presented. Vias can be formed in the CD layer. Second QCEs can be formed on a second crystalline surface of the CD layer. A seal layer can be applied to the patterned second metallization layer that forms the second QCEs. A handle wafer can be bonded to the seal layer. The chip stack can be turned over to place a substrate at the top, and handle wafer at the bottom, of the chip stack. The substrate and a buried oxide layer can be removed to expose the first crystalline surface of the CD layer. First QCEs can be formed on the first crystalline surface of the CD layer. A portion of the first QCEs can be coupled or interconnected to a portion of the second QCEs.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile