The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2025

Filed:

Aug. 21, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hye Rim Hong, Suwon-si, KR;

Taejin Choi, Suwon-si, KR;

Chul Joon Heo, Busan, KR;

Kyung Bae Park, Hwaseong-si, KR;

Seon-Jeong Lim, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2005.12); C07D 209/86 (2005.12); H10K 85/60 (2022.12); H10K 30/30 (2022.12); H10K 30/82 (2022.12); H10K 39/32 (2022.12);
U.S. Cl.
CPC ...
H10K 85/6572 (2023.01); C07D 209/86 (2012.12); H10K 30/30 (2023.01); H10K 30/82 (2023.01); H10K 39/32 (2023.01);
Abstract

Disclosed are a photoelectric conversion device includes a first electrode and a second electrode, a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor, and an organic buffer layer between the first electrode and the photoelectric conversion layer, the organic buffer layer including an organic buffer material, wherein a difference between a LUMO energy level of the organic buffer material and a LUMO energy level of the n-type semiconductor is greater than or equal to about 1.2 eV and the organic buffer material includes at least three carbazole moieties, and a sensor, and an electronic device including the same.


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