The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
May. 27, 2021
Applicant:
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen, CN;
Inventor:
Macai Lu, Shenzhen, CN;
Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10K 59/121 (2022.12); H01L 27/12 (2005.12); H10K 59/12 (2022.12); H10K 71/00 (2022.12);
U.S. Cl.
CPC ...
H10K 59/1213 (2023.01); H10K 71/00 (2023.01); H01L 27/1229 (2012.12); H01L 27/1248 (2012.12); H10K 59/1201 (2023.01);
Abstract
A display panel and a manufacturing method are provided. The present disclosure can reduce process steps of the display panel by disposing a first source electrode and a first drain electrode of a low temperature polysilicon thin film transistor and a second source electrode and a second drain electrode of an oxide thin film transistor in a same layer. Therefore, stability of the oxide thin film transistor can be improved, a channel length of the oxide thin film transistor can be shortened correspondingly, resolution of the display panel can be improved, and a thickness of the display panel can be reduced.