The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Aug. 11, 2021
Innoscience (Suzhou) Technology Co., Ltd., Suzhou, CN;
Qiyue Zhao, Suzhou, CN;
Yu Shi, Suzhou, CN;
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD., Suzhou, CN;
Abstract
A semiconductor device includes a first and a second nitride-based semiconductor layers, a first and a second electrodes, a first and a second gate electrodes, a first and a second passivation layers and a conductive layer. The first passivation layer has a first portion covered with a first end portion of the first field plate and a second portion free from coverage of the first field plate. The second passivation layer has a first portion covered by the conductive layer and a second portion free from coverage of the conductive layer. A thickness difference between the first and the second portions of the first passivation layer is less than a thickness difference between the first and the second portions of the second passivation layer.