Semiconductor element, method of reading out a quantum dot device and system

Abstract

Semiconductor element, method of reading out a quantum dot device and system. The present document relates to a semiconductor element for providing a source reservoir for a charge sensor of a quantum dot device. The element comprises a semiconductor heterostructure () including a quantum well layer () contiguous to a semiconductor functional layer (), one or more ohmic contacts () for providing charge carriers, and a first accumulation gate electrode () located opposite the quantum well layer and spaced apart therefrom at least by the semiconductor functional layer for enabling to form a two dimensional charge carrier gas () in a first area of the quantum well layer upon applying a first biasing voltage to the first accumulation gate electrode. The device further comprises a second accumulation gate electrode () opposite the quantum well layer and electrically isolated from the first accumulation gate electrode (), the second accumulation gate electrode enabling to be biased with a second biasing voltage, for enabling to extend the two dimensional charge carrier gas in a second area () contiguous to the first area. This document further relates to a method of determining a spin state in a quantum dot device, as well as a system comprising a quantum dot device and a semiconductor element.