The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Aug. 30, 2022
Applicant:
Wuhan China Star Optoelectronics Technology Co., Ltd., Wuhan, CN;
Inventors:
Fei Al, Wuhan, CN;
Dewei Song, Wuhan, CN;
Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2005.12); H10D 30/67 (2024.12); H10K 59/121 (2022.12);
U.S. Cl.
CPC ...
H10D 30/6729 (2024.12); H10D 30/6717 (2024.12); H10D 30/6728 (2024.12); H10D 30/6758 (2024.12); H10K 59/1213 (2023.01);
Abstract
The present disclosure provides a vertical inverter and a semiconductor device including the vertical inverter, and the vertical inverter includes an insulation substrate, a first thin film transistor, and a second thin film transistor. By a layered arrangement of the first and second thin film transistors of the vertical inverter, more thin film transistors can be arranged within the limited space, so that the integration degree of the thin film transistors in the semiconductor device can be improved.