The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Nov. 09, 2021
Innoscience (Suzhou) Technology Co., Ltd., Suzhou, CN;
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD., Suzhou, CN;
Abstract
A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a single III-V group semiconductor layer, a third nitride-based semiconductor layer, a first source electrode and a second electrode, and a gate electrode. The second nitride-based semiconductor layer is disposed over the first nitride-based semiconductor layer. The single III-V group semiconductor layer is disposed between the first and second nitride-based semiconductor layers and doped to the first conductivity type. The single III-V group semiconductor layer has a high resistivity region and a current aperture enclosed by the high resistivity region, in which the high resistivity region comprises more metal oxides than the current aperture so as to achieve a resistivity higher than that of the current aperture. The third nitride-based semiconductor layer is disposed over the second nitride-based semiconductor layer. The first source electrode, the second electrode, and the gate electrode are disposed over the third nitride-based semiconductor layer.