The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Apr. 22, 2022
Sandisk Technologies Llc, Addison, TX (US);
Sandisk Technologies, Inc., Milpitas, CA (US);
Abstract
A sacrificial memory opening fill structure for a multi-tier memory device may include a semiconductor fill material portion a metallic fill material portion to enhance control of a vertical cross-sectional profile of an inter-tier memory opening. Multiple inter-tier dielectric layers may be employed to reduce sharp corners in a memory opening fill structure. Alternatively or additionally, a combination of an isotropic etch process followed by an anisotropic etch process may be used to form a first-tier memory opening.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile