The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Jun. 17, 2021
Qualcomm Incorporated, San Diego, CA (US);
Mahbod Ghelichi, San Diego, CA (US);
James Francis Geekie, Carlsbad, CA (US);
Raghu Narayan Challa, San Diego, CA (US);
Mihir Vijay Laghate, San Diego, CA (US);
Ruhua He, San Diego, CA (US);
Yong Li, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
In some aspects, the present disclosure provides methods, apparatuses, and systems for efficient thermal mitigation while maintaining wireless device performance on a primary component carrier (PCC). Embodiments described may include implementation of target transceiver module configurations, where bandwidth (e.g., PCC bands and secondary component carrier (SCC) bands) may be monitored by a wireless device based on intra-module target configurations and/or inter-module target configurations. An intra-module target configuration may include a target transceiver module monitoring both PCC bands and SCC bands. An inter-module target configuration may include or refer to a plurality of target transceiver modules together monitoring PCC bands and SCC bands. In scenarios where operating temperatures exceed temperature thresholds, target transceiver module configurations may be implemented to transition PCC bands, SCC bands, or both, from a PCC-resident transceiver module to another transceiver module to reduce the operating temperatures of concern. Various additional and alternative aspects are described herein.