The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2025

Filed:

Jul. 27, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Dongju Lee, Suwon-si, KR;

Seunghyuk Kim, Suwon-si, KR;

Suho Jin, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/04 (2005.12);
U.S. Cl.
CPC ...
H04B 1/0458 (2012.12); H04B 1/0483 (2012.12); H04B 2001/0416 (2012.12);
Abstract

An electronic device may comprise antenna, low-noise amplifier, radio frequency integrated circuit (RFIC), and communication. The communication processor may be configured to identify a low-noise amplifier for amplifying a first RF signal and a low-noise amplifier for amplifying a second RF signal, based on the low-noise amplifier for amplifying the first RF signal differing from the low-noise amplifier for amplifying the second RF signal, set a first gain of the low-noise amplifier for amplifying the first RF signal, set a second gain of the low-noise amplifier for amplifying the second RF signal, based on the low-noise amplifier for amplifying the first RF signal being identical to the low-noise amplifier for amplifying the second RF signal, set a third gain of a low-noise amplifier of amplifying the first RF signal and the second RF signal.


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