The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2025

Filed:

Jan. 02, 2025
Applicant:

Shenzhen Technology University, Shenzhen, CN;

Inventors:

Hui Li, Shenzhen, CN;

Jian Feng, Shenzhen, CN;

Chuyu Zhong, Shenzhen, CN;

Shupeng Deng, Shenzhen, CN;

Shihao Ding, Shenzhen, CN;

Nannan Li, Shenzhen, CN;

Jinlong Lu, Shenzhen, CN;

Wanxian Xu, Shenzhen, CN;

Zhenhuan Qiu, Shenzhen, CN;

Shaochi Pan, Shenzhen, CN;

Cunzheng Ning, Shenzhen, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/183 (2005.12); H01S 5/042 (2005.12); H01S 5/227 (2005.12); H01S 5/30 (2005.12);
U.S. Cl.
CPC ...
H01S 5/18344 (2012.12); H01S 5/04256 (2019.07); H01S 5/18361 (2012.12); H01S 5/2275 (2012.12); H01S 5/3095 (2012.12);
Abstract

Provided are a new vertical cavity surface emitting laser structure and a manufacturing method thereof. The structure includes a substrate layer, a lower N-type DBR, an active region, an upper N-type DBR and a mixed dielectric DBR sequentially arranged from bottom to top, where a second-class tunnel junction is arranged on one side of the active region close to the upper N-type DBR, where the second-class tunnel junction is embedded in a bottom of the upper N-type DBR and surrounded by the upper N-type DBR, and the substrate layer, the lower N-type DBR, the active region, the upper N-type DBR, the mixed dielectric DBR and the second-class tunnel junction are all coaxial elliptical cylinders; negative electrodes are arranged on the lower N-type DBR, and positive electrodes are arranged on the upper N-type DBRs substrate layer.


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