The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Jun. 17, 2019
Applicant:
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Inventors:
Naoki Fujiwara, Musashino, JP;
Takahiko Shindo, Musashino, JP;
Shigeru Kanazawa, Musashino, JP;
Meishin Chin, Musashino, JP;
Assignee:
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/16 (2005.12); G02B 6/42 (2005.12); H01S 5/026 (2005.12); H01S 5/12 (2020.12); H01S 5/227 (2005.12);
U.S. Cl.
CPC ...
H01S 5/1231 (2012.12); G02B 6/4207 (2012.12); H01S 5/0265 (2012.12); H01S 5/16 (2012.12); H01S 5/2275 (2012.12); H01S 5/164 (2012.12);
Abstract
Provided is a semiconductor light source element or an optical device including a semiconductor optical waveguide of a high-mesa semi-insulated embedded structure having a window structure made of the same material as an overclad layer at a light emission end, and a method for manufacturing thereof, in which an active layer at a portion of the window structure is removed, and then the same layer as the overclad layer is formed.