The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Jan. 27, 2022
Beijing Boe Sensor Technology Co., Ltd., Beijing, CN;
Boe Technology Group Co., Ltd., Beijing, CN;
Xiaobo Wang, Beijing, CN;
Haocheng Jia, Beijing, CN;
Chuncheng Che, Beijing, CN;
Zhifeng Zhang, Beijing, CN;
Cuiwei Tang, Beijing, CN;
Yong Liu, Beijing, CN;
Honggang Liang, Beijing, CN;
Sheng Chen, Beijing, CN;
Xueyan Su, Beijing, CN;
Hailong Lian, Beijing, CN;
Yi Ding, Beijing, CN;
Jing Xie, Beijing, CN;
Wei Zhang, Beijing, CN;
Weisi Zhou, Beijing, CN;
Meng Wei, Beijing, CN;
Jing Wang, Beijing, CN;
Zhenguo Zhang, Beijing, CN;
Feng Qu, Beijing, CN;
Beijing BOE Sensor Technology Co., Ltd., Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Abstract
There is provided a phase shifter having a phase shift region and a peripheral region, and including a first substrate, a second substrate and a dielectric layer between such two substrates; the first substrate includes a first dielectric substrate, a first electrode and a first auxiliary structure; the second substrate includes a second dielectric substrate, a second electrode and a second auxiliary structure; the phase shift region includes overlapping regions; the first electrode and the second electrode are located in the phase shift region, and have orthographic projections, on the first dielectric substrate, overlapped at least partially in the overlapping regions; the first auxiliary structure is in the peripheral region and on a side, close to the dielectric layer, of the first dielectric substrate; the second auxiliary structure is in the peripheral region and on a side, close to the dielectric layer, of the second dielectric substrate.