The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2025

Filed:

Jun. 28, 2022
Applicant:

Nichia Corporation, Anan, JP;

Inventor:

Ryota Funakoshi, Tokushima, JP;

Assignee:

NICHIA CORPORATION, Anan, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2009.12); H01L 33/02 (2009.12); H01L 33/06 (2009.12); H01L 33/38 (2009.12);
U.S. Cl.
CPC ...
H01L 33/06 (2012.12); H01L 33/005 (2012.12); H01L 33/025 (2012.12); H01L 33/382 (2012.12); H01L 2933/0016 (2012.12);
Abstract

A method for manufacturing a light-emitting element includes forming a first light-emitting part, forming a tunnel junction part on the first light-emitting part, and forming a second light-emitting part on the tunnel junction part. The step of forming the first light-emitting part includes forming a first layer with a first p-type impurity concentration at a first temperature, and forming a second layer with a second p-type impurity concentration on the first layer. The second p-type impurity concentration is greater than the first p-type impurity concentration. The step of forming the second light-emitting part includes forming a third layer with a third p-type impurity concentration at a second temperature and forming a fourth layer with a fourth p-type impurity concentration on the third layer. The fourth p-type impurity concentration is greater than the third p-type impurity concentration. The second temperature is less than the first temperature.


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