The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2025

Filed:

Oct. 09, 2020
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventor:

Ryota Takemura, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2013.12); H01L 31/0304 (2005.12);
U.S. Cl.
CPC ...
H01L 31/02327 (2012.12); H01L 31/03046 (2012.12);
Abstract

A ridge structure () including at least a light-absorbing layer () is provided on a semiconductor substrate (). A semiconductor embedding layer () has a refractive index lower than that of the light-absorbing layer () and embeds a side surface of the light-absorbing layer (). A semiconductor layer () has a refractive index between that of the light-absorbing layer () and that of the semiconductor embedding layer () and is provided between the side surface of the light-absorbing layer () and the semiconductor embedding layer (). The refractive index of the semiconductor layer () is n3, a wavelength of the incident light () is λ, a thickness of the semiconductor layer () in a lateral direction is in a range of −30% to +20% of λ/(4×n3).


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