The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2025

Filed:

Sep. 08, 2023
Applicant:

Maxeon Solar Pte. Ltd., Singapore, SG;

Inventor:

Seung Bum Rim, Palo Alto, CA (US);

Assignee:

Maxeon Solar Pte. Ltd., Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2005.12); H01L 31/0216 (2013.12); H01L 31/0236 (2005.12); H01L 31/028 (2005.12); H01L 31/0368 (2005.12); H01L 31/18 (2005.12);
U.S. Cl.
CPC ...
H01L 31/022425 (2012.12); H01L 31/02168 (2012.12); H01L 31/02363 (2012.12); H01L 31/028 (2012.12); H01L 31/03682 (2012.12); H01L 31/1804 (2012.12);
Abstract

Methods of fabricating conductive contacts for polycrystalline silicon features of solar cells, and the resulting solar cells, are described. In an example, a method of fabricating a solar cell includes providing a substrate having a polycrystalline silicon feature. The method also includes forming a conductive paste directly on the polycrystalline silicon feature. The method also includes firing the conductive paste at a temperature above approximately 700 degrees Celsius to form a conductive contact for the polycrystalline silicon feature. The method also includes, subsequent to firing the conductive paste, forming an anti-reflective coating (ARC) layer on the polycrystalline silicon feature and the conductive contact. The method also includes forming a conductive structure in an opening through the ARC layer and electrically contacting the conductive contact.


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