The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Mar. 31, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Junghyun Kim, Suwon-si, KR;
Bumsuk Kim, Hwaseong-si, KR;
Jonghoon Park, Seoul, KR;
Hyungeun Yoo, Suwon-si, KR;
Yun Ki Lee, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
An image sensor includes a substrate including pixel regions and having a first surface, a second surface opposite the first surface, and a first trench recessed from the first surface, a shallow device isolation pattern provided in the first trench, and a deep device isolation pattern between the pixel regions and provided in the substrate. The deep device isolation pattern includes a semiconductor pattern penetrating at least a portion of the substrate, and an isolation pattern provided between the substrate and the semiconductor pattern. The isolation pattern includes a first isolation pattern adjacent to the second surface, and a second isolation pattern adjacent to the first surface. A first interface at which the first isolation pattern contacts the second isolation pattern is spaced apart from the shallow device isolation pattern. The first isolation pattern includes a different material from that of the second isolation pattern.