The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Nov. 05, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jonghyun Go, Seongnam-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
Disclosed are a semiconductor device and an image sensor including the same. The semiconductor device includes a device isolation layer defining an active region on a semiconductor substrate, a gate electrode crossing the active region, a gate insulating pattern between the gate electrode and the semiconductor substrate, a first impurity region provided at a first side of the gate electrode in the active region, and a second impurity region provided at a second side of the gate electrode in the active region, and the gate insulating pattern includes a first edge portion adjacent to a first sidewall of the device isolation layer, a second edge portion adjacent to a second sidewall of the device isolation layer, and a center portion between the first and second edge portions, and the first edge portion has a first thickness, and the second edge portion has a second thickness smaller than the first thickness.