The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2025

Filed:

Jan. 10, 2022
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Jun Yong Song, Icheon-si, KR;

Kang Hun Kim, Icheon-si, KR;

Si Yun Kim, Icheon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2005.12); H01L 23/00 (2005.12);
U.S. Cl.
CPC ...
H01L 24/06 (2012.12); H01L 24/02 (2012.12); H01L 24/03 (2012.12); H01L 24/14 (2012.12); H01L 24/49 (2012.12); H01L 24/05 (2012.12); H01L 24/13 (2012.12); H01L 24/48 (2012.12); H01L 2224/02313 (2012.12); H01L 2224/02331 (2012.12); H01L 2224/02381 (2012.12); H01L 2224/0239 (2012.12); H01L 2224/0346 (2012.12); H01L 2224/03614 (2012.12); H01L 2224/03914 (2012.12); H01L 2224/05008 (2012.12); H01L 2224/05073 (2012.12); H01L 2224/05166 (2012.12); H01L 2224/05548 (2012.12); H01L 2224/05573 (2012.12); H01L 2224/05639 (2012.12); H01L 2224/05644 (2012.12); H01L 2224/05647 (2012.12); H01L 2224/06102 (2012.12); H01L 2224/13111 (2012.12); H01L 2224/13147 (2012.12); H01L 2224/1403 (2012.12); H01L 2224/48227 (2012.12); H01L 2224/49107 (2012.12);
Abstract

A semiconductor device includes a chip body; a passivation layer on the chip body; a lower dielectric layer on the passivation layer; a first re-distribution pad on the lower dielectric layer; an upper dielectric layer on the lower dielectric layer, the upper dielectric layer having a groove that exposes an upper surface of the first re-distribution pad; and a second re-distribution pad on the upper dielectric layer. An upper surface of the second re-distribution pad is positioned at a higher level than the upper surface of the first re-distribution pad.


Find Patent Forward Citations

Song, Jun. (2025). Semiconductor device including re-distribution pads disposed at different levels and a method of manufacturing the same (U.S. Patent No. 12288761). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12288761

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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