The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Apr. 06, 2022
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Juik Lee, Anyang-si, KR;
Jong-Min Lee, Hwaseong-si, KR;
Jimin Choi, Seoul, KR;
Yeonjin Lee, Suwon-si, KR;
Jeon Il Lee, Suwon-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2005.12); H01L 23/00 (2005.12); H01L 23/48 (2005.12); H01L 23/522 (2005.12); H01L 23/528 (2005.12); H01L 25/065 (2022.12); H01L 25/10 (2005.12);
U.S. Cl.
CPC ...
H01L 23/481 (2012.12); H01L 23/5226 (2012.12); H01L 23/528 (2012.12); H01L 24/16 (2012.12); H01L 24/17 (2012.12); H01L 25/0657 (2012.12); H01L 25/105 (2012.12); H01L 2224/16146 (2012.12); H01L 2224/17181 (2012.12); H01L 2225/06513 (2012.12); H01L 2225/06541 (2012.12);
Abstract
A semiconductor device includes a substrate including a first side and a second side opposite to each other, a first penetrating structure that penetrates the substrate, and a second penetrating structure that penetrates the substrate, the second penetrating structure being spaced apart from the first penetrating structure, and an area of the first penetrating structure being more than twice an area of the second penetrating structure, as viewed from the first side of the substrate.