The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Feb. 25, 2022
Denso Corporation, Kariya, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Mirise Technologies Corporation, Nisshin, JP;
Hamamatsu Photonics K.k., Hamamatsu, JP;
Masatake Nagaya, Nisshin, JP;
Daisuke Kawaguchi, Hamamatsu, JP;
DENSO CORPORATION, Kariya, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
MIRISE Technologies Corporation, Nisshin, JP;
HAMAMATSU PHOTONICS K.K, Hamamatsu, JP;
Abstract
A manufacturing method for a semiconductor chip includes: preparing a GaN wafer; producing a processed wafer by forming an epitaxial film on a surface of the GaN wafer to have chip formation regions adjacent to a first surface of the processed wafer; forming a first surface-side element component of a semiconductor element in each chip formation region; forming a wafer transformation layer along a planar direction of the processed wafer by irradiating an inside of the processed wafer with a laser beam; dividing the processed wafer at the wafer transformation layer into a chip formation wafer and a recycle wafer; extracting a semiconductor chip from the chip formation wafer; and after the preparing the GaN wafer and before the dividing the processed wafer, irradiating an inside of the gallium nitride wafer or the processed wafer with a laser beam to form a mark by deposition of gallium.