The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2025

Filed:

Feb. 20, 2024
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Srinivas Gandikota, Santa Clara, CA (US);

Steven C. H. Hung, Sunnyvale, CA (US);

Srinivas D. Nemani, Saratoga, CA (US);

Yixiong Yang, Fremont, CA (US);

Susmit Singha Roy, Campbell, CA (US);

Nikolaos Bekiaris, Campbell, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2005.12); H01L 23/48 (2005.12);
U.S. Cl.
CPC ...
H01L 21/76864 (2012.12); H01L 21/76898 (2012.12); H01L 23/481 (2012.12);
Abstract

A method of forming an electronic device is disclosed. The method comprises forming depositing a metal on a substrate, the metal comprising one or more of copper (Cu), titanium (Ti), or tantalum (Ta). A metal cap is deposited on the metal. The metal cap comprises one or more of molybdenum (Mo), ruthenium (Ru), iridium (Ir), rhodium (Rh), palladium (Pd), silver (Ag), osmium (Os), platinum (Pt), or gold (Au). The substrate is then exposed to an anneal process, e.g., a hydrogen high-pressure anneal. The formation of the metal cap on the metal minimizes parasitic adsorption of hydrogen by the underlying metal.


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