The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2025

Filed:

Mar. 02, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Abhijeet Laxman Sangle, Maharashtra, IN;

Nilesh Patil, Dist Thane, IN;

Vijay Bhan Sharma, Rajasthan, IN;

Visweswaren Sivaramakrishnan, Cupertino, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2005.12); C23C 14/08 (2005.12); H01J 37/32 (2005.12); H01J 37/34 (2005.12); H01L 21/02 (2005.12);
U.S. Cl.
CPC ...
H01J 37/32064 (2012.12); C23C 14/081 (2012.12); C23C 14/083 (2012.12); C23C 14/3485 (2012.12); H01J 37/3426 (2012.12); H01J 2237/332 (2012.12); H01L 21/02178 (2012.12); H01L 21/02194 (2012.12); H01L 21/02197 (2012.12); H01L 21/02266 (2012.12);
Abstract

A vapor deposition system and methods of operation thereof are disclosed. The vapor deposition system includes a vacuum chamber; a dielectric target within the vacuum chamber, the dielectric target having a front surface and a thickness; a substrate support within the vacuum chamber, the substrate support having a front surface spaced from the front surface of the dielectric target to form a process gap; and a signal generator connected to the dielectric target to generate a plasma in the vacuum chamber, the signal generator comprises a power source, the power source configured to prevent charge accumulation in the dielectric target. The method includes applying power to a dielectric target within a vacuum chamber to generate a plasma in a process gap between the dielectric target and a substrate support and pulsing the power applied to the dielectric target to prevent charge accumulation.


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