The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Sep. 28, 2023
Applicant:
Bae Systems Information and Electronic Systems Integration Inc., Nashua, NH (US);
Inventors:
Gary M. Madison, Waltham, MA (US);
Kevin Grout, Manchester, NH (US);
Assignee:
BAE Systems Information and Electronic Systems Integration Inc., Nashua, NH (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 27/02 (2005.12); H03K 17/60 (2005.12); H03K 17/687 (2005.12); H03K 19/0175 (2005.12);
U.S. Cl.
CPC ...
G11C 27/026 (2012.12); H03K 17/60 (2012.12); H03K 17/687 (2012.12); H03K 19/017509 (2012.12);
Abstract
A sample and hold amplifier output buffer with the low leakage of metal oxide semiconductor field effect transistors (MOSFET) combined with the linearity and dynamic range of silicon-germanium (SiGe) bipolar junction transistors (BJT). In one aspect, the present disclosure provides a sample and hold amplifier output buffer placing a MOSFET input device between the base and emitter of a high linearity SiGe BJT.