The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Jan. 21, 2021
Applicant:
Wuhan Tianma Micro-electronics Co., Ltd., Wuhan, CN;
Inventor:
Genshiro Kawachi, Kanagawa, JP;
Assignee:
Wuhan Tianma Micro-Electronics Co., Ltd., Wuhan, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/36 (2019.12); G06F 30/3312 (2019.12); G06F 30/367 (2019.12); G06F 30/396 (2019.12); G06F 117/04 (2019.12); G06F 119/06 (2019.12); G06F 119/12 (2019.12);
U.S. Cl.
CPC ...
G06F 30/367 (2019.12); G06F 30/3312 (2019.12); G06F 30/396 (2019.12); G06F 2101/10 (2012.12); G06F 2101/14 (2012.12); G06F 2117/04 (2019.12); G06F 2119/06 (2019.12); G06F 2119/12 (2019.12);
Abstract
A simulation method includes a process of calculating a transient charge density qof trapped charges after applying a voltage between a gate electrode and a semiconductor layer of a transistor, the charge density qbeing calculated with a time variance of the charge density qbeing expressed by a function obtained by superimposing multiple exponential functions having mutually different time constants.