The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Aug. 11, 2020
Paul Scherrer Institut, Villigen, CH;
Christian David, Lauchringen, DE;
Vitaliy Guzenko, Baden-Wuerttemben, DE;
Paul Scherrer Institut, Villigen PSI, CH;
Abstract
A method for manufacturing a low-angle blazed grating on a semiconductor or silicon substrate, includes spin-coating the substrate with resist layer or hydrogen or polysilsesquioxane, being 100-1000 nm or few hundred nanometers thick, applying grayscale irradiation lithography exposure to the resist layer, generating a dose modulated pattern therein, varying in response to absorbed energy density from irradiation lithography exposure. The coated, irradiated substrate is developed in solution, such as TMAH or NaOH, enabling a blazed profile having structures of thickness-dependent diffusion barriers or SiO, with 0-1000 nm height to emerge. Thermal oxidation in oxygen atmosphere at elevated temperature with the developed substrate, converts the upper silicon substrate layer into SiOto a depth depending on the thickness of the pattern in the resist layer above. Hydrofluoric acid fluid removes the SiO, creating low-angle low-roughness blazed grating structure on silicon substrate.