The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2025

Filed:

Sep. 30, 2020
Applicant:

Vanjee Technology Co., Ltd., Beijing, CN;

Inventors:

Pengfei Wang, Beijing, CN;

Yang Xu, Beijing, CN;

Yejin Zhang, Beijing, CN;

Hongyan Yu, Beijing, CN;

Jiaoqing Pan, Beijing, CN;

Qingfei Wang, Beijing, CN;

Linyan Tian, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01S 7/484 (2005.12); G01S 7/4863 (2019.12); G01S 17/89 (2019.12); G02B 6/12 (2005.12); G02B 6/293 (2005.12); H01S 3/23 (2005.12); H04B 10/50 (2012.12);
U.S. Cl.
CPC ...
G01S 7/484 (2012.12); G01S 7/4863 (2012.12); G01S 17/89 (2012.12); G02B 6/29382 (2012.12); H01S 3/2391 (2012.12); H04B 10/506 (2012.12); G02B 2006/12164 (2012.12);
Abstract

The present disclosure provides a phased array LiDAR transmitting chip of mixed materials, a manufacturing method thereof, and a LiDAR device. The phased array LiDAR transmitting chip of mixed materials includes: a first material structure layer and an SOI silicon waveguide structure layer, the first material structure layer is optically connected to the SOI silicon waveguide structure layer through a coupling connection structure; the first material structure layer is configured to couple input light into the chip; the coupling connection structure is configured to split a light wave coupled to the chip, and couple each of split light waves into a corresponding silicon waveguide in the SOI silicon waveguide structure layer; where a non-linear refractive index of the first material in the first material structure layer is lower than a non-linear refractive index of silicon material.


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