The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Oct. 30, 2019
The Board of Trustees of the Leland Stanford Junior University, Stanford, CA (US);
Nicholas Alexander Melosh, Menlo Park, CA (US);
Matthew A. Gebbie, Stanford, CA (US);
Patrick McQuade, Stanford, CA (US);
Andrew E. Gonzalez, Stanford, CA (US);
The Board of Trustees of the Leland Stanford Junior University, Stanford, CA (US);
Abstract
This disclosure enables the generation and patterning of color centers with nanometer-scale spatial control in a variety of materials in repeatable fashion and without the use of radiation. Embodiments in accordance with the present disclosure employ a layer of vacancy-injection material disposed on a host-material, where the vacancy-injection material forms a compound with host-material atoms at elevated temperatures. During compound formation, lattice vacancies are generated in the host material and diffuse within the substrate lattice to bond with impurity atoms, thereby forming color centers. High-resolution lithographic patterning of the vacancy-injection film and the short diffusion lengths of the lattice vacancies enables nanometer-level spatial control over the lateral positions of the color centers. Furthermore, the depth of the color centers in the substrate can be controlled by controlling the coating material, thickness, anneal time, and anneal temperature.