The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Dec. 18, 2020
Applicant:
Osaka University, Osaka, JP;
Inventors:
Seiji Kameda, Suita, JP;
Masayuki Hirata, Suita, JP;
Assignee:
OSAKA UNIVERSITY, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/30 (2005.12); A61N 1/02 (2005.12); A61N 1/08 (2005.12); G01K 7/00 (2005.12); G05F 1/567 (2005.12); H03G 3/10 (2005.12); H03K 17/081 (2005.12); H03K 17/08 (2005.12);
U.S. Cl.
CPC ...
A61N 1/025 (2012.12); A61N 1/08 (2012.12); G01K 7/00 (2012.12); G05F 1/567 (2012.12); H03K 17/08104 (2012.12); H03K 2017/0806 (2012.12);
Abstract
A resistance device () includes a field-effect transistor (TN) and a voltage applying circuit (). The voltage applying circuit () applies a control voltage (Vgs) between the gate and source of the field-effect transistor (TN) according to a temperature (T) to control a resistance value (R) between the drain and source of the field-effect transistor (TN). The control voltage (Vgs) is a voltage obtained by adding a correction voltage (Vc) to a reference voltage (Vgs). The correction voltage (Vc) depends on the temperature (T) and is set to be zero at a first temperature (T).