The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2025

Filed:

Apr. 29, 2020
Applicant:

Sony Group Corporation, Tokyo, JP;

Inventors:

Toshiki Moriwaki, Tokyo, JP;

Hiroshi Nakano, Tokyo, JP;

Yoichiro Iino, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 30/10 (2022.12); H01L 29/24 (2005.12); H10K 39/32 (2022.12);
U.S. Cl.
CPC ...
H10K 30/10 (2023.01); H01L 29/24 (2012.12); H10K 39/32 (2023.01);
Abstract

Provided is an imaging element that includes a photoelectric conversion section. The photoelectric conversion section includes a first electrode, a photoelectric conversion layer including an organic material, and a second electrode that are stacked, an inorganic oxide semiconductor material layer is formed between the first electrode and the photoelectric conversion layer, and when a composition of an inorganic oxide semiconductor material included in the inorganic oxide semiconductor material layer is represented by MaNbSncO (where M denotes an aluminum (Al) atom, and N denotes a gallium atom (Ga) or a zinc (Zn) atom, or a gallium (Ga) atom and a zinc (Zn) atom), a+b+c=1.00, 0.01≤a≤0.04, and b<c are satisfied.


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