The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2025

Filed:

Oct. 28, 2020
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Manabu Yanagihara, Osaka, JP;

Takahiro Sato, Toyama, JP;

Hiroto Yamagiwa, Hyogo, JP;

Masahiro Hikita, Hyogo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/01 (2024.12); H10D 8/60 (2024.12); H10D 30/47 (2024.12); H10D 62/85 (2024.12);
U.S. Cl.
CPC ...
H10D 84/01 (2024.12); H10D 8/60 (2024.12); H10D 30/475 (2024.12); H10D 62/8503 (2024.12); H10D 30/47 (2024.12); H10D 30/4732 (2024.12);
Abstract

The semiconductor device includes: a semiconductor substrate; a first transistor disposed above the semiconductor substrate and including a first source electrode, a first gate region, and a first drain electrode; and a second transistor disposed above the semiconductor substrate and including a second source electrode, a second gate region, and a second drain electrode. The first source electrode, the second gate region, and the second source electrode are substantially at an identical potential. The first drain electrode and the second drain electrode are substantially at an identical potential.


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